Synchrotron X-ray Topography Laboratory
Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY

Yi Chen

Contact:
Old Engineering Building, Room 311
Dept of Materials Science & Engineering
Stony Brook University
NY 11794-2275

yichen1@ic.sunysb.edu
Phone: (631) 632 8501
Fax: (631) 632 8052

Education
Publications
Conference Presentations
Awards and Honors

I am a Ph.D. student at the Synchrotron X-ray Topography Laboratory in the Department of Materials Science & Engineering at Stony Brook University. My research interests are in the areas of:

  • Crystal Growth & Defects
  • Chemical vapor deposition (CVD)
  • Physical vapor transport (PVT)
  • X-ray diffraction topography
  • High resolution x-ray diffraction (XRD)
  • Powder XRD, AFM, TEM, SEM/EDS
  • Wide bandgap semiconductors (SiC, ZnO, AlN, GaN)
  • Optical crystals (CaF2, Sapphire)
  • Solar cell materials and Packaging of integrated circuits
  • Strain/stress analysis of single crystals
Current Research Projects

Office of Naval Research (ONR) sponsored project “Known Good Substrates” for growing large-area low defect density silicon carbide (SiC) bulk single crystals/epitaxial layers.

Department of Energy (DOE)/ National Renewable Energy Laboratory (NREL) sponsored research project “SWBXT Studies of Grain Size, Orientation and Strain in Multicrystalline silicon Ingots, Bricks and Wafers and Investigation of the Distribution of Impurities” in collaboration with BP Solar.

Intel sponsored project on “Synchrotron White Beam X-ray Topography for In-situ Silicon Stress Analysis and Dynamic Dehavior of Edge Defects” to study stresses and damage incurred in silicon dies for microelectronic chips during the fabrication and packaging process



Education

Ph.D. candidate, Department of Materials Science and Engineering, Stony Brook University
2005, M.S. in Materials Science and Engineering, Stony Brook University
2002, M.S. in Materials Science, Fudan University
1999, B.S. in Materials Science, Fudan University

Back to top



Publications

Y. Chen, N. Zhang, X. R. Huang, D. R. Black, and M. Dudley, “Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer”, Mater. Sci. Forum, (submitted)

Y. Chen, M. Dudley, E. K. Sanchez, and M. F. MacMillan, “Sense Determination of Micropipes via Grazing-incidence Synchrotron White Beam X-ray Topographyin 4H-Silicon Carbide”, Mater. Sci. Forum, (submitted)

Y. Chen, R. Balaji, M. Dudley, M. Murthy, J. A. Freitas Jr., and S. Maximenko, “Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography”, Mater. Sci. Forum, (submitted)

Y. Chen, M. Dudley, K. X. Liu, J. D. Caldwell, and R. E. Stahlbush, “Synchrotron X-ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers”, Mater. Sci. Forum, 2007 (submitted)

M. F. MacMillan, E. K. Sanchez, M. Dudley, Y. Chen, and M. J. Loboda, “Micropipe Dissociation through thick n+ buffer layer growth”, Mater. Sci. Forum, 2007 (submitted)

M. Dudley, Y. Chen, and X. R. Huang, “Aspects of Dislocation Behavior in SiC”, Mater. Sci. Forum, (submitted)

P. Wu, M. Yoganathan, I. Zwieback, Y. Chen, and M. Dudley, “Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates”, Mater. Sci. Forum (submitted)

I. Kamata, M. Nagano, H. Tsuchida, Y. Chen, and M. Dudley, “High Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers”, Mater. Sci. Forum (submitted)

R. Wang, R. Ma, G. Dhanaraj, Y. Chen, and M. Dudley, “Computational study of SiC halide chemical vapor deposition system”, Proceedings of ASME 2007 International Mechanical Engineering Congress and Exposition

Y. Chen, N. Zhang, M. Dudley, J. D. Caldwell, K. X. Liu, and R. E. Stahlbush, “Investigation of electron-hole recombination activated partial dislocations and their behaviors in 4H-SiC bipolar devices”, Journal of Electronic Materials (submitted)

Y. Chen, and M. Dudley, “Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses”, Journal of Electronic Materials (in press)

Y. Chen, and M. Dudley, “Direct determination of dislocation sense of closed-core threading screw dislocations using synchrotron white beam x-ray topography in 4H silicon carbide”, Appl. Phys. Lett. 91, (2007) (in press)

Y. Chen, G. Dhanaraj, M. Dudley, E. K. Sanchez, and M. F. MacMillan, “Sense Determination of Micropipes via Grazing-incidence Synchrotron White Beam X-ray Topography in 4H Silicon Carbide”, Appl. Phys. Lett. 91, 071917 (2007)

X. R. Huang, D. R. Black, A. T. Macrander, J. Maj, Y. Chen and M. Dudley, “High-resolution imaging of dislocations in SiC using monochromatic synchrotron topography”, Appl. Phys. Lett. 2007 (in press)

Y. Chen, M. Dudley, K. X. Liu, and R. E. Stahlbush, “Interaction between Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide PiN Diode”, Mater. Res. Soc. Symp. Proc., 0994, 0994-F12-03 (2007)


Y. Chen, M. Dudley, K. X. Liu, and R. E. Stahlbush, “Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers”, Appl. Phys. Lett., 90, 171930 (2007)

Y. Chen, G. Dhanaraj, M. Dudley, and R. Ma, “Investigation and Properties of Grain Boundaries in Silicon Carbide”, Mater. Res. Soc. Symp. Proc., 955E, 0955-I07-50 (2007)

G. Dhanaraj, Y. Chen, M. Dudley, and H. Zhang, “Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and their Characterization”, J. Electron. Mater. 35, 1513-1517 (2007)

Y. Chen, G. Dhanaraj, W. Vetter, R. Ma, and M. Dudley, “Behavior of basal plane dislocations and low angle grain boundary formation in hexagonal silicon carbide”, Mater. Sci. Forum 556-557, 231 (2007)

H. Chen, G. Wang, Y. Chen, and M. Dudley, “The Formation Mechanism of Carrot Defect in Silicon Carbide”, Mater. Res. Soc. Symp. Proc. 911, 0911-B05-24, 163-168 (2006)

G. Dhanaraj, Y. Chen, M. Dudley et al., “Growth Mechanisms and Dislocation Characterization of SiC Epitaxial Films”, in “Silicon Carbide – Materials, Processing, and Devices”, M. A. Capano, M. Dudley, T. Kimoto, and A. R. Powell (Eds.), Mater. Res. Soc. Symp. Proc. 911, 0911-B05-27, 157-162 (2006)

Y. Chen, G. Dhanaraj, M. Dudley et al., “Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC”, in “Silicon Carbide – Materials, Processing, and Devices”, M. A. Capano, M. Dudley, T. Kimoto, and A. R. Powell (Eds.), Mater. Res. Soc. Symp. Proc. 911, 0911-B09-04, 151-156 (2006)

R. Wang, R. Ma, G. Dhanaraj, Y. Chen and M. Dudley, “Modeling of Halide Chemical Vapor Deposition of SiC”, Proceedings of ASME 2006 International Mechanical Engineering Congress and Exposition

Y. Chen, G. Dhanaraj, and M. Dudley, “Thermodynamic studies of carbon in liquid silicon using central atoms model”, J. Am. Ceram. Soc. 89, 2922-2925 (2006);

Y. Chen, G. Dhanaraj, H. Chen, M. Dudley and H. Zhang, “Chemical vapor deposition and defect characterization of SiC epitaxial films”, in “Progress in Semiconductor Materials V – Novel Materials and Electronic and Optoelectronic Applications, L. J. Olafsen, A. Saxler, M. C. Wanke, and R. M. Biefield (Eds.), Mater. Res. Soc. Symp. Proc. 891, 0891-EE12-11.1-11.6 (2006)

G. Dhanaraj, Y. Chen, M. Dudley, B. Wu, and H. Zhang, “Growth and surface morphology of 6H-SiC bulk and epitaxial crystals”, Mater. Sci. Forum 527-529, 67-70 (2006);

G. Dhanaraj, M. Dudley, Y. Chen, B. Raghothamachar, B. Wu and H. Zhang, “Epitaxial growth and characterization of silicon carbide films”, Journal of Crystal Growth 287, 344 (2006)

Back to top



Conference Presentations

Y. Chen, N. Zhang, X. R. Huang, D. R. Black, and M. Dudley, “Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer”, (poster presented by Y. Chen), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

Y. Chen, M. Dudley, E. K. Sanchez, and M. F. MacMillan, “Sense Determination of Micropipes via Grazing-incidence Synchrotron White Beam X-ray Topography in 4H-Silicon Carbide”, (lecture presented by Y. Chen), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

Y. Chen, R. Balaji, M.Dudley, M. Murthy, J. A. Freitas Jr., and S. Maximenko, “Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography”, (poster presented by Y. Chen), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

Y. Chen, M. Dudley, K. X. Liu, J. Caldwell, and R. E. Stahlbush, “Synchrotron X-ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers”, (poster presented by Y. Chen), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

M. F. MacMillan, E. K. Sanchez, M. Dudley, Y. Chen, and M. J. Loboda, “Micropipe Dissociation through thick n+ buffer layer growth”, (poster presented by M. F. MacMillan), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

M. Dudley, Y. Chen, and X. R. Huang, “Aspects of Dislocation Behavior in SiC”, (INVITED lecture presented by M. Dudley), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

P. Wu, M. Yoganathan, I. Zwieback, Y. Chen, and M. Dudley, “Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates”, (poster presented by P. Wu), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

I. Kamata, M. Nagano, H. Tsuchida, Y. Chen and M. Dudley, “High Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers”, (Lecture presented by I. Kamata), International Conference on Silicon Carbide and Related Materials, Otsu, Japan, Oct. 2007

G. Dhanaraj, Y. Chen and M. Dudley, “Chemical vapor deposition of SiC epitaxial films, and ex-situ and in-situ defect characterization”, (lecture to be presented by G. Dhanaraj), International Union of Materials Research Societies-10th International Conference on Advanced Materials, Banglore, India, Oct. 8-13, 2007

Y. Chen, G. Dhanaraj, and M. Dudley, “Investigation of low angle grain boundaries in 4H-silicon carbide”(poster presented by Y. Chen), 15th International Conference on Crystal Growth, Salt Lake City, UT, USA, Aug. 2007

Y. Chen, B. Raghothamachar, G. Dhanaraj, and M. Dudley “Sense determination of micropipes via ray-tracing simulation and synchrotron white beam X-ray topography”(lecture presented by B. Raghothamachar), 15th International Conference on Crystal Growth, Salt Lake City, UT, USA, Aug. 2007

B. Raghothamachar, G. Dhanaraj, Y. Chen, M. Callahan and M. Dudley, “Structural evaluation of zinc oxide (ZnO) single crystals” (lecture to be presented by B. Raghothamachar), 15th International Conference on Crystal Growth, Salt Lake City, UT, USA, Aug. 2007

Y. Chen, M. Dudley, “Sense Determination of Micropipes/Threading Screw Dislocations via Synchrotron White Beam Grazing-incidence X-ray Topography in 4H-Silicon Carbide”(lecture presented by Y. Chen), 49th Electronic Materials Conference, Notre Dame, IN, USA, Jun. 20-22, 2007

Y. Chen, M. Dudley, K. X. Liu and R. E. Stahlbush, “Observations of the Influence of Threading Dislocations on the Recombination Enhanced Partial Dislocation Glide in 4H-Silicon Carbide Epitaxial Layers”(lecture presented by Y. Chen), 49th Electronic Materials Conference, Notre Dame, IN, USA, Jun. 20-22, 2007

Y. Chen, M. Dudley, K. X. Liu and R. E. Stahlbush, “Interaction between Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers” (lecture presented by Y. Chen), MRS Spring Meeting, San Francisco, CA, April 2007

Y. Chen, G. Dhanaraj, M. Dudley, “Investigation and properties of grain boundaries in silicon carbide” (poster presented by Y. Chen), 2006 MRS FALL MEETING, NOV., 2006, BOSTON, MA

Y. Chen, M. Dudley and R. Ma, “Multiplication of basal plane dislocations and low angle grain boundary formation in hexagonal silicon carbide” (lecture presented by M. Dudley), 6th European Conference on Silicon Carbide and Related Materials, Newcastle Upon Tyne, U.K., Sept. 2006

G. Dhanaraj, Y. Chen, M. Dudley and H. Zhang, “Chemical vapor deposition of silicon carbide epitaxial films and their characterization”(lecture presented by G. Dhanaraj), Electronic Materials Conferene, Penn State University, PA, USA, June 2006

H. Chen, G. Wang, Y. Chen et al., “The Formation mechanism of carrot defect in SiC”(poster presented by H. Chen), 2006 MRS Spring Meeting, Apr., 2006, San Francisco, CA

G. Dhanaraj, Y. Chen, H. Chen, M. Dudley and H. Zhang, “Growth mechanism and dislocation characterization of SiC epitaxial films” (poster presented by G. Dhanaraj and Y. Chen), MRS Spring Meeting, San Francisco, CA Apr., 2006

Y. Chen, G. Dhanaraj, M. Dudley et al., “Multiplication of basal plane dislocations via interaction with c-axis threading dislocations in 4H-SiC”(lecture presented by Y. Chen), 2006 MRS Spring Meeting, San Francisco, CA, Apr., 2006

Y. Chen, G. Dhanaraj, M. Dudley and H. Zhang, “Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films”(poster presented by Y. Chen), 2005 MRS Fall Meeting, Nov., 2005, Boston, MA

G. Dhanaraj, Y. Chen, M. Dudley, B. Wu and H. Zhang, “Growth and surface morphology of 6H-SiC bulk and epitaxial crystals”(poster presented by G. Dhanaraj and Y. Chen), International Conference on Silicon Carbide and Related Materials 2005, Pittsburgh, PA;

G. Dhanaraj, M. Dudley, Y. Chen, B. Raghothamachar, B. Wu and H. Zhang, “Epitaxial growth and characterization of silicon carbide films”(lecture presented by G. Dhanaraj), 16th American Conference on Crystal Growth and Epitaxy, July, 2005, Big Sky, Montana;

G. Dhanaraj, Y. Chen, V. Wetter, X. R. Huang, B. Raghothamachar and M. Dudley, “Defect characterization using synchrotron X-ray topography”(poster presented by G. Dhanaraj and Y. Chen), AACG quarterly meeting, June, 2005, Rutgers, NJ

Y. Chen, G. Dhanaraj and M. Dudley, “Defects and surface morphology in SiC single crystals”(poster presented by Y. Chen), NSLS Annual’s Users’ Meeting 2005, Upton, NY;

S. Liang, Y. Chen, T. Eidelberg, and J. C. Rojo, “High-temperature Sublimation Growth of Bulk ZnO Single Crystals”(poster presented by S. Liang and Y. Chen). 8th III-Nitrides workshop, Richmond, VA, Oct. 2003;

Back to top



Awards and Honors

Electronic Materials Conference 2007 Student Travel Award - Jun 2007;

Sigma Xi Grants-In-Aid Research award (Eight recipients in Engineering worldwide) - Oct. 2005;

People’s Scholarship of Fudan University for six times, 1995-1999;

Student of the year (1998-1999), Fudan University (top 5%);

Excellent League Member of Fudan University (top 10%), 2000-2001;

Honored graduate students of Fudan University (top 5%), 2002;