Synchrotron X-ray Topography Laboratory
Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY

Recent Publications

1. Chen, Y; Dhanaraj, G; Dudley, M; Sanchez, EK; MacMillan, MF. 2007. Sense determination of micropipes via grazing-incidence synchrotron white beam x-ray topography in 4H silicon carbide. APPLIED PHYSICS LETTERS 91 (7): 071917.

2. Dhanaraj, G; Chen, Y; Chen, H; Cai, D; Zhang, H; Dudley, M. 2007. Chemical vapor deposition of silicon carbide epitaxial films and their defect characterization. JOURNAL OF ELECTRONIC MATERIALS 36 (4): 332-339.

3. Chen, Y; Dudley, M; Liu, KX; Stahlbush, RE. 2007. Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers. APPLIED PHYSICS LETTERS 90 (17): 171930.

4. Kamata, I; Tsuchida, H; Vetter, WM; Dudley, M. 2007. High-resolution x-ray topography of dislocations in 4H-SiC epilayers. JOURNAL OF MATERIALS RESEARCH 22 (4): 845-849.

5. Bai, J; Park, JS; Cheng, Z; Curtin, M; Adekore, B; Carroll, M; Lochtefeld, A; Dudley, M. 2007. Study of the defect elimination mechanisms in aspect ratio trapping Ge growth. APPLIED PHYSICS LETTERS 90 (10): 101902.

6. Gu, Z; Edgar, JH; Raghothamachar, B; Dudley, M; Zhuang, D; Sitar, Z; Coffey, DW. 2007. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer. JOURNAL OF MATERIALS RESEARCH 22 (3): 675-680.

7. Wang, G; Ji, Y; Zhang, LH; Zhu, YM; Gouma, PI; Dudley, M. 2007. Synthesis of molybdenum oxide nanoplatelets during crystallization of the precursor gel from its hybrid nanocomposites. CHEMISTRY OF MATERIALS 19 (5): 979-981.

8. Dhanaraj, G; Dudley, M; Bliss, D; Callahan, M; Harris, M. 2006. Growth and process induced dislocations in zinc oxide crystals. JOURNAL OF CRYSTAL GROWTH 297 (1): 74-79.

9. Wang, G; Tan, ZK; Liu, XQ; Chawda, S; Koo, JS; Samuilov, V; Dudley, M. 2006. Conducting MWNT/poly(vinyl acetate) composite nanofibres by electrospinning. NANOTECHNOLOGY 17 (23): 5829-5835.

10. Wang, G; Ji, Y; Huang, XR; Yang, XQ; Gouma, PI; Dudley, M. 2006. Fabrication and characterization of polycrystalline WO3 nanofibers and their application for ammonia sensing. JOURNAL OF PHYSICAL CHEMISTRY B 110 (47): 23777-23782.

11. Neudeck, PG; Trunek, AJ; Spry, DJ; Powell, JA; Du, H; Skowronski, M; Huang, XR; Dudley, M. 2006. CVD growth of 3C-SiC on 4H/6H mesas. CHEMICAL VAPOR DEPOSITION 12 (8-9): 531-540.

12. Chen, Y; Dhanaraj, G; Dudley, M; Zhang, H. 2006. Thermodynamic studies of carbon in liquid silicon using the central atoms model. JOURNAL OF THE AMERICAN CERAMIC SOCIETY 89 (9): 2922-2925.

13. Zhuang, D; Herro, ZG; Schlesser, R; Raghothamachar, B; Dudley, M; Sitar, Z. 2006. Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport. JOURNAL OF ELECTRONIC MATERIALS 35 (7): 1513-1517.

14. Bai, J; Huang, X; Dudley, M. 2006. High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 (1-3): 180-183.

15. Dudley, M; Bai, J; Huang, X; Vetter, WM; Dhanaraj, G; Raghothamachar, B. 2006. Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 9 (1-3): 315-322.

16. Raghothamachar, B; Dhanaraj, G; Bai, J; Dudley, M. 2006. Defect analysis in crystals using X-ray topography. MICROSCOPY RESEARCH AND TECHNIQUE 69 (5): 343-358.

17. Volz, MP; Schweizer, M; Raghothamachar, B; Dudley, M; Szoke, J; Cobb, SD; Szofran, FR. 2006. X-ray characterization of detached-grown germanium crystals. JOURNAL OF CRYSTAL GROWTH 290 (2): 446-451.

18. Su, CH; Lehoczky, SL; Li, C; Raghothamachar, B; Dudley, M; Szoke, J; Barczy, P. 2006. Crystal growth of CdTe by gradient freeze in universal multizone crystallizator (UMC). SOLIDIFICATION AND GRAVITY IV 508: 117-123. Book series title: MATERIALS SCIENCE FORUM

19. Vetter, WM; Dudley, M. 2006. The character of micropipes in silicon carbide crystals. PHILOSOPHICAL MAGAZINE 86 (9): 1209-1225.

20. Bai, J; Dudley, M; Sun, WH; Wang, HM; Khan, MA. 2006. Reduction of threading dislocation densities in AlN/sapphire epilayers driven by growth mode modification. APPLIED PHYSICS LETTERS 88 (5): 051903.

21. Dhanaraj, G; Dudley, M; Chen, Y; Raghothamachar, B; Wu, B; Zhang, H. 2006. Epitaxial growth and characterization of silicon carbide films. JOURNAL OF CRYSTAL GROWTH 287 (2): 344-348.

22. Raghothamachar, B; Bai, J; Dudley, M; Dalmau, R; Zhuang, DJ; Herro, Z; Schlesser, R; Sitar, Z; Wang, BG; Callahan, M; Rakes, K; Konkapaka, P; Spencer, M. 2006. Characterization of bulk grown GaN and AlN single crystal materials. JOURNAL OF CRYSTAL GROWTH 287 (2): 349-353. Hollingsworth, MD; Peterson, ML; Rush, JR; Brown, ME; Abel, MJ; Black, AA; Dudley, M; Raghothamachar, B; Werner-Zwanziger, U; Still, EJ; Vanecko, JA. 2005. Memory and perfection in ferroelastic inclusion compounds. CRYSTAL GROWTH & DESIGN 5 (6): 2100-2116.

23. Bai, J; Huang, X; Dudley, M; Wagner, B; Davis, RF; Wu, L; Sutter, E; Zhu, Y; Skromme, BJ. 2005. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN. JOURNAL OF APPLIED PHYSICS 98 (6):063510.

24. Huang, XR; Bai, J; Dudley, M; Wagner, B; Davis, RF; Zhu, Y. 2005. Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides. PHYSICAL REVIEW LETTERS 95 (8): 086101.

25. Bai, J; Dudley, M; Chen, L; Skromme, BJ; Wagner, B; Davis, RF; Chowdhury, U; Dupuis, RD. 2005. Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates. JOURNAL OF APPLIED PHYSICS 97 (11): 116101.

26. Huang, XR; Bai, J; Dudley, M; Dupuis, RD; Chowdhury, U. 2005. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire. APPLIED PHYSICS LETTERS 86 (21): 211916.

27. Noveski, V; Schlesser, R; Raghothamachar, B; Dudley, M; Mahajan, S; Beaudoin, S; Sitar, Z. 2005. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules. JOURNAL OF CRYSTAL GROWTH 279 (1-2): 13-19.

28. Vetter, WM; Tsuchida, H; Kamata, I; Dudley, M. 2005. Simulation of threading dislocation images in X-ray topographs of silicon carbide homo-epilayers. JOURNAL OF APPLIED CRYSTALLOGRAPHY 38: 442-447, Part 3.

29. Liu, B; Edgar, JH; Raghothamachar, B; Dudley, M; Lin, JY; Jiang, HX; Sarua, A; Kuball, M. 2005. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 117 (1): 99-104.

30. Wang, Y; Ali, GN; Mikhov, MK; Vaidyanathan, V; Skromme, BJ; Raghothamachar, B; Dudley, M. 2005. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes. JOURNAL OF APPLIED PHYSICS 97 (1): 013540.

31. Liu, B; Edgar, JH; Gu, Z; Zhuang, D; Raghothamachar, B; Dudley, M; Sarua, A; Kuball, M; Meyer, HM. 2004. The durability of various crucible materials for aluminum nitride crystal growth by sublimation. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH 9 (6): 6. Dhanaraj, G; Dudley, M; Ma, RH; Zhang, H; Prasad, V. 2004. Design and fabrication of physical vapor transport system for the growth of SiC crystals. REVIEW OF SCIENTIFIC INSTRUMENTS 75 (9): 2843-2847.

32. Huang, XR; Dudley, M; Cho, W; Okojie, RS; Neudeck, PG. 2004. Characterization of SiC epitaxial structures using high-resolution X-ray diffraction techniques. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 457-460: 157-162, Part 1&2. Book series title: MATERIALS SCIENCE FORUM

33. Ma, X; Dudley, M; Sudarshan, T. 2004. Nondestructive defect characterization of SiC epilayers and its significance for SiC device research. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 457-460: 601-604, Part 1&2. Book series title: MATERIALS SCIENCE FORUM

34. Bai, J; Dhanaraj, G; Gouma, P; Dudley, M; Mynbaeva, M. 2004. Porous SiC for HT chemical sensing devices: an assessment of its thermal stability. SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 457-460: 1479-1482, Part 1&2. Book series title: MATERIALS SCIENCE FORUM

35. Vetter, WM; Dudley, M. 2004. Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals. JOURNAL OF APPLIED PHYSICS 96 (1): 348-353.

36. Bai, J; Dudley, M; Raghothamachar, B; Gouma, P; Skromme, BJ; Chen, L; Hartlieb, PJ; Michaels, E; Kolis, JW. 2004. Correlated structural and optical characterization of ammonothermally grown bulk GaN. APPLIED PHYSICS LETTERS 84 (17): 3289-3291.

37. Vetter, WM; Dudley, M. 2004. The contrast of inclusions compared with that of micropipes in back-reflection synchrotron white-beam topographs of SiC. JOURNAL OF APPLIED CRYSTALLOGRAPHY 37: 200-203, Part 2.

38. Cho, WD; Huang, XR; Dudley, M. 2004. 'Exact' formulation for pi-polarization waves of dynamical X-ray diffraction. ACTA CRYSTALLOGRAPHICA SECTION A 60: 195-197, Part 2.

39. Vetter, WA; Nagarajan, R; Edgar, JH; Dudley, M. 2004. Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition. MATERIALS LETTERS 58 (7-8): 1331-1335.

40. Vetter, WM; Dudley, M. 2004. Characterization of defects in 3C-silicon carbide crystals. JOURNAL OF CRYSTAL GROWTH 260 (1-2): 201-208.

41. Ma, RH; Zhang, H; Dudley, M; Prasad, V. 2003. Thermal system design and dislocation reduction for growth of wide band gap crystals: application to SiC growth. JOURNAL OF CRYSTAL GROWTH 258 (3-4): 318-330.

42. Ma, XY; Dudley, M; Vetter, W; Sudarshan, T. 2003. Extended SiC defects: Polarized light microscopy delineation and synchrotron white-beam X-ray topography ratification. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 42 (9AB): L1077-L1079.

43. Dudley, M; Huang, XR; Vetter, WM; Neudeck, PG. 2002. Synchrotron White Beam X-ray Topography and High Resolution Triple Axis X-ray Diffraction studies of defects in SiC substrates, epilayers and devices. SILICON CARBIDE AND RELATED MATERIALS - 2002 433-4: 247-252. Book series title: MATERIALS SCIENCE FORUM

44. Vetter, WM; Dudley, M. 2003. Open-ended stacking-fault tetrahedra in X-ray topographs of cubic silicon carbide. PHILOSOPHICAL MAGAZINE LETTERS 83 (8): 473-476.

45. Dudley, M; Huang, XR; Vetter, WM. 2003. Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC. JOURNAL OF PHYSICS D-APPLIED PHYSICS 36 (10A): A30-A36, Sp. Iss. SI. Record 48 of 75 Palosz, W; Grasza, K; Durose, K; Halliday, DP; Boyall, NM; Dudley, M; Raghothamachar, B; Cai, L. 2003. The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport. JOURNAL OF CRYSTAL GROWTH 254 (3-4): 316-328.

46. Vetter, WM; Liu, JQ; Dudley, M; Skowronski, M; Lendenmann, H; Hallin, C. 2003. Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 98 (3): 220-224.

Huang, XR; Dudley, M. 2003. A universal computation method for two-beam dynamical X-ray diffraction. ACTA CRYSTALLOGRAPHICA SECTION A 59: 163-167, Part 2

47. Raghothamachar, B; Dudley, M; Rojo, JC; Morgan, K; Schowalter, LJ. 2003. X-ray characterization of bulk AlN single crystals grown by the sublimation technique. JOURNAL OF CRYSTAL GROWTH 250 (1-2): 244-250.

48. Vetter, WM; Dudley, M. 2002. Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC. JOURNAL OF APPLIED CRYSTALLOGRAPHY 35: 689-695, Part 6.

49. Raghothamachar, B; Vetter, WM; Dudley, M; Dalmau, R; Schlesser, R; Sitar, Z; Michaels, E; Kolis, JW. 2002. Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN. JOURNAL OF CRYSTAL GROWTH 246 (3-4): 271-280.

50. Skowronski, M; Liu, JQ; Vetter, WM; Dudley, M; Hallin, C; Lendenmann, H. 2002. Recombination-enhanced defect motion in forward-biased 4H-SiC p-n diodes. JOURNAL OF APPLIED PHYSICS 92 (8): 4699-4704.

51. Neudeck, PG; Powell, JA; Beheim, GM; Benavage, EL; Abel, PB; Trunek, AJ; Spry, DJ; Dudley, M; Vetter, WM. 2002. Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers. JOURNAL OF APPLIED PHYSICS 92 (5): 2391-2400.

52. Dudley, M; Vetter, WM; Huang, XR; Neudeck, PG; Powell, JA. 2002. Polytype identification and mapping in heteroepitaxial growth of 3C on atomically flat 4H-SiC mesas using synchrotron white-beam X-ray topography. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 389-3: 391-394. Book series title: MATERIALS SCIENCE FORUM

53. Ha, S; Vetter, WM; Dudley, M; Skowronski, M. 2002. A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers. SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS 389-3: 443-446. Book series title: MATERIALS SCIENCE FORUM

54. Vetter, WM; Totsuka, H; Dudley, M; Kahr, B. 2002. The perfection and defect structure of organic hourglass inclusion K2SO4 crystals. JOURNAL OF CRYSTAL GROWTH 241 (4): 498-506.

55. Dudley, M; Vetter, WM; Neudeck, PG. 2002. Polytype identification in heteroepitaxial 3C-SiC grown on 4H-SiC mesas using synchrotron white beam X-ray topography. JOURNAL OF CRYSTAL GROWTH 240 (1-2): 22-33.

56. Ma, RH; Zhang, H; Prasad, V; Dudley, M. 2002. Growth kinetics and thermal stress in the sublimation growth of silicon carbide. CRYSTAL GROWTH & DESIGN 2 (3): 213-220.

57. Vetter, WM; Gallagher, DT; Dudley, M. 2002. Synchrotron white-beam X-ray topography of ribonuclease S crystals. ACTA CRYSTALLOGRAPHICA SECTION D-BIOLOGICAL CRYSTALLOGRAPHY 58: 579-584, Part 4.

58. Hollingsworth, MD; Brown, ME; Dudley, M; Chung, H; Peterson, ML; Hillier, AC. 2002. Template effects, asymmetry, and twinning in helical inclusion compounds. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 41 (6): 965-+.

59. Vetter, WM; Dudley, M. 2001. Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES 81 (12): 2885-2902.

60. Vetter, WM; Dudley, M. 2001. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 87 (2): 173-177.

61. Rojo, JC; Slack, GA; Morgan, K; Raghothamachar, B; Dudley, M; Schowalter, LJ. 2001. Report on the growth of bulk aluminum nitride and subsequent substrate preparation. JOURNAL OF CRYSTAL GROWTH 231 (3): 317-321.

62. Vetter, WM; Huang, W; Neudeck, P; Powell, JA; Dudley, M. 2001. Synchrotron white-beam topographic studies of 2H-SiC crystals. JOURNAL OF CRYSTAL GROWTH 224 (3-4): 269-273.

63. Vetter, WM; Dudley, M. 2001. X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in hexagonal silicon carbide. JOURNAL OF APPLIED CRYSTALLOGRAPHY 34: 20-26, Part 1.

64. Huang, XR; Dudley, M; Zhao, JY. 2001. Forbidden X-ray wavefields of three-beam Bragg reflections from thick crystals. ACTA CRYSTALLOGRAPHICA SECTION A 57: 68-75, Part 1.