|
|
|
Current Topics of Research
Optimization of process parameters for physical vapor transport
growth via numerical modeling
Large single-crystal substrates
are necessary for the developing the next generation of opto-electronic and electronic devices based on
wide-bandgap semiconductors. The successful development of crystal growth technologies for wide bandgap
semiconductors will depend critically upon the understanding and optimization of the growth conditions
as the system is scaled up. For many materials grown from the vapor phase, e.g. SiC, AlN, and ZnO,
numerical modeling has become an essential and powerful tool to cost-efficiently predict optimal growth
conditions resulting in high-quality crystals. In collaboration with industry, and the support of NYS
CAT sensor and the SPIR office, we are combining numerical models and experimental techniques to identify
the best operational parameters that allow maximizing the reproducibility of the growth process of wide
bandgap semiconductors from the vapor.
Crystal
growth of large-area, III-nitrides substrates
We are also
embarked in the development of novel crystal growth methods to produce large III-nitride native substrates
for the epitaxy and device fabrication. Under the support of the SUNY at Stony Brook Graduate Research
Initiative (GRI) and the Dean's office of the College of Engineering and Applied Sciences we have developed
a crystal growth facility to produce III-nitride bulk and thin film single crystals from high temperature
solutions. Our systems will be capable of operating at up to 1,200 psi (~80 bars) of pressure and
temperatures exceeding 1,400oC. The optimization of existing growth technologies and the
development of novel ones will be the main goal of the research carried out in this system. Alternative
solution-melts will be explored as a way to improve the growth rate or the supersaturation control.
Synthesis of Nanoporous GaN Crystalline Particles by Chemical Vapor Deposition
The unique properties that porous semiconductor materials exhibit compared
to their bulk counterparts have propelled the utilization of these materials in the fabrication of enhanced
devices for advanced microelectronics, sensors, interfacial structures and catalysis. We are using a chemical
vapour deposition approach based on direct reaction of Ga with NH3 to study the nucleation and evolution of
nanoporous GaN particles with a pore size of less than 100 nm.
| |
