Charles M. Fortmann

Dept. of Materials Science & Engineering
State University of New York at Stony Brook
Stony Brook, NY 11794, USA
OFFICE: (631) 632-9343
FAX: (631) 632-8052
cfortmann@notes.cc.sunysb.edu


Main Research Topics:

  • Computer modeling and simulation of protein shape change, secondary structure and neural systems
  • Thin film photonic and electronic materials and devices (theory and experiment)
  • Amorphous and microcrystalline material and deposition theory
  • Opto-electronic device theory

Education:

  • Ph.D. - Materials Science & Engineering, Stanford University (1985) "CdS/CdTe Heterojunction Transport and Vapor Growth of Film CdTe by Hot Wall Vacuum Evaporation" Advisor: R.H. Bube
  • M.S. - Materials Science and Engineering, Stanford University (1982)
  • B.S. - Physics, University of Maryland (1975)


Awards

  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Spring 2001
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Fall 2001
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Fall 2004
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Spring 2005
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Fall 2005
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Spring 2006
  • SUNY Stony Brook Applied Mathematics and Statistics Outstanding Teacher Fall 2006

Work Experience:

September 07 - present:
Associate Professor
Material Science and Engineering, Stony Brook University

March 00 - August 07:
Associate Professor (visiting)
Applied Math and Statistics, Stony Brook University
Develop research programs related to the mathematical simulation of complex biological molecules including gene proteins with a goal of contributing to the developing high speed tools for protein structure identification. Model and simulate the amorphous-crystalline silicon phase transformation with the goal of improving crystal quality for advanced highly scaled integrated electronic circuits and refractive index patterning for an integrated photonic device technology. Research funded under a Navy Research contract. Teaching, Calculus III, multivariable calculus. Presently advising one graduate student. Since March 00 five manuscripts submitted for publication.

April 97 - Feb. 00:
Professor (full) of Innovative and Engineered Materials with tenure
Tokyo Institute of Technology, Graduate School
Responsible for graduatre lectures in fields related to material preparation, electronic properties of condensed matter, photo conduction and photovoltaic device physics. Developed new fundamental descriptions of optical and electronic properties of condensed matter, developed new materials and devices. Advised 3 graduate students. Principal investigator of a thin film silicon research grant. Have written numerous publications related to funded and/or collaboration based research. Adjunct Professor of the Applied Mathematics Dept. SUNY Stony Brook, Stony, Brook New York, advise one student, PI of US Navy Subcontract related to the preparation of micro electronic circuits based on thin films silicon technology. Over twenty publications prepared during this period.

Feb. 95 - April 97:
Research Scientist-Visiting Associate Professor (without tenure)
Research Foundation and the Applied Mathematics Department, Stony Brook University
Responsible for the development of research programs which involve theoretical semiconductor physics and mathematical simulations with industrial applications. PI of solar cell research program which collaborated with local industry and having international research contributions, funded by the New York State Energy Research and Development Authority ($70, 000/ year for 2 years). Advised one graduate student.


May 93 - Jan. 95:
Associate Professor (without tenure)
Electrical Engineering, Pennsylvania State University
Responsible for directing graduate students, writing proposals, reports, and scientific publications. Amorphous silicon area chairman of the 23rd Photovoltaic Specialist Conference. Developing new thin film electronic analysis techniques and theoretical considerations for electronic transport in disordered materials. Developing material deposition equipment. Responsible for one graduate student and 6 graduate students of my colleague (C.R. Wronski) during his sabbatical leave (May - Dec 1994). Developed and was principal author of a grant proposal ultimately funded at ~ $230,000/ year for 3 years. Taught EE 414 Laser Theory and Applications, fall 1994.


Oct. 88 - Jan. 93:
Research Scientist-Assistant Professor of Material Science
Institute of Energy Conversion, University of Delaware
Principal Investigator on a NREL funded research project to develop a better understanding of amorphous materials and the interrelationship between material limitations and optimum device design. Design experiments and reactors to elucidate the growth mechanisms of amorphous and micro-crystalline thin films. Assist in the advisement of three chemical engineering graduate students (two awarded Ph.D. in 1991, one M.S. 1992). Principal investigator of three projects total funding $500,000. I taught graduate course on kinetic processes (Atomic diffusion and crystal growth, Spring 1989 and Spring 1991). Designed and supervised the construction of amorphous silicon deposition sytems.


April 85 - Oct. 88:
Project Staff Scientist
Solarex, Thin Film Division
Responsible for lead investigative effort in new amorphous materials and characterization. Developed silicon germanium and carbon alloys for solar cell applications. Developed theoretical models for material characterization using device analysis. Chairman of the Safety Committee for two years. Designed and supervised the construction of two amorphous silicon reactors.


Sept. 80 - May 85:
Research Assistant
Stanford University
Responsible for the development of vacuum vapor deposition equipment, growth and device characterization of CdTe films grown by a novel technique. Developed heterojunction transport model leading to a better understanding of CdS/CdTe solar cells. Studied the growth and doping phenomena associated with the vapor deposition of CdTe. Designed and built hot wall vacuum system for II-VI semiconductor deposition.


April 78 - Sept. 80:
Research Associate
Institute of Energy Conversion, University of Delaware
Responsible for a-Si:H film and device preparation and characterization. Designed and built two deposition systems for a-Si:H. One research paper prepared.


Nov. 75 - Jan. 78:
Peace Corps/Vista, Washington, DC - Peace Corps Volunteer, taught upper level high school physics and mathematics at Labasa College in the Fiji Islands. Director of the schools science club.

Short Term and Visiting Positions:

May 01-Aug. O1 Visiting Professor, Ecole Polytechnique, establish collaboration for the development of photonic materials, characterization methods, investigation of photo induced optical properties, and devices based on disordered solids. Also, provide technical assistance in the fabrication of photovoltaic solar energy conversion devices and electronic characterization of amorphous silicon-based materials.


Nov. 95- Jan. 96 Visiting Professor, Tokyo Institute of Technology, Continuation of ongoing collaboration with Prof. Isamu Shimizu. Developed new light trapping scheme for thin film crystalline silicon solar cells. Assisted in the development of a new theoretical framework concerning the electronic transport in amorphous silicon and its optical band gap. Several scientific paper are expected to result.


1 June-12 July 95 Visiting Scientist, Institut Fur Schicht und Ionentechnik Forschungszentrum, Julich, Germany. Continuation of ongoing collaboration. Developed new optical trapping schemes for more optimized solar cell performance. Developed and submitted patent application for new solar cell design incorporating deposited emitter and collector layers. Several scientific papers concerning this work have been submitted. Return visits in 1996, 1997 and 1998 to continue collaboration efforts, new solar cell atomic diffusion barriers developed to enable the preparation of thin film solar cells at high temperatures and/or under other extreme deposition conditions.


Jan. 95 (1 month) Visiting Professor, Tokyo Institute of Technology, the Graduate School, Yokohama, Japan. Collaborated in research on amorphous silicon, and micro-crystalline silicon deposition chemistry. Assisted in graduate student research advising. Collaboration lead to two presentations at the 16 th International Amorphous Silicon Conference and 2 publications in the Journal of Non-Crystalline Solids. A new method for the preparation of highly scaled circuit manufacturing was developed.


26 Jan.- 3 Mar. 94 Visiting Professor, Institut Fur Schicht und Ionentechnik Forschungszentrum, Julich, Germany. Assisted in the development of high efficiency amorphous silicon-germanium solar cells, achieved state-of-the-art solar cell performance. Assisted in developing electronic descriptions of new material measurements. Gave 3 seminars on solar cell performance, and fundamental science related to photovoltaic technologies.


Oct.-Dec. 93 Visiting Scientist, Tokyo Institute of Technology, The Graduate School, Yokohama, Japan. Responsible for assisting Prof. Isamu Shimizu's group in their quest to develop useful technological devices based on ZnS/ZnSe ordered alloys and multi-layer quantum well structures based on novel low temperature preparation techniques. One publication produced by during this trip.


Feb.-May 93 Visiting Professor, University of Neuchatel, Neuchatel, Switzerland. Responsible for the directing of graduate students and research in the improvement of solar cells based on amorphous silicon materials. Began to develop new theoretical framework for electrical and optical processes in disordered semiconductors, three publications result.

Related skills:
Languages: Japanese (basic conversation), German (intermediate)

Professional Organizations:
Member of the IEEE, Materials Research Society, SPIE

Other Interests:
Bicycle racing and touring, sailing and community service including Big Brothers.

Journal Publications


  1. W. Huber, A. Farenbruch, C.M. Fortmann, and R.H. Bube, "Grain Boundary Phenomena in n-type CdTe Films Grown by Hot Wall Vacuum Evaporation," J. Appl. Phys. 54 (7), (1983), pp. 4038-4040
  2. R. Bube, A. Farenbruch, R. Sinclair, T. C. Anthony, C.M. Fortmann, W. Huber, C-T. Lee, T. Thorpe, and T. Yamasitia, “Cadmium Telluride Films and Devices” IEEE Trans. on Electron Devices., 31 , (5), (1984), pp. 528-538
  3. C.M. Fortmann, A.L. Farenbruch, R.H. Bube, "Relative Carrier Densities and Trap Effects on the Properties of CdS/CdTe," J. Appl. Phys., 61 (5), (1987), pp. 2038-2041
  4. C.M. Fortmann, S. Lange, M. Hicks, C.R. Wronski, "Effect of Light-Induced Defects on the Short Wavelength Quantum Efficiencies of Amorphous Silicon Solar Cell Structures," J. Appl. Phys. 64 (8), 4219-4222 (1988).
  5. N. Saxena, D.A. Albright, C.M. Fortmann, T.W.F. Russell, P.M. Fauchet, I. Campbell, "The Temperature Dependence of H Radical Etching in the Deposition of Microcrystalline Silicon Alloy Films by Hg-sensitized Photo-CVD," J. of Non-Crystalline Solids, 114, 801 (1989).
  6. C.M. Fortmann, S.S. Hegedus, W.A. Buchanan, "Design Considerations for Low Band Gap a-SiGe:H Solar Cells," J. Non-Crystalline Solids 115, 21 (1989).
  7. C.M. Fortmann, T.Z. Zhou, W.A. Buchanan, "The Relationship Between Hydrogen Content, Weak Bonds and the Staebler-Wronski Effect in Amorphous Silicon," J. Non-Crystalline Solids 114, 624 (1989).
  8. A.J. Nelson, A.R. Mason, A.B. Swartzlander, L.L. Kazmerski, N. Saxena, C.M. Fortmann, T.W.F. Russell, "Auger Line Shape and Electron Loss Spectroscopy Analysis of Amorphous, Microcrystalline and B-SiC, J. Vac. Sci. Technol. A8(3), May/June 1990 pp. 1538-1543
  9. D.E. Albright, N. Saxena, C.M. Fortmann, R.E. Rocheleau, T.W.F. Russell, "Mercury Sensitized Photochemical Vapor Deposition of Amorphous Silicon, AIChE Journal 36 (10), 1555 (1990).
  10. C.M. Fortmann, S.S. Hegedus, T.X. Zhou and B.N. Baron, "Hydrogen Content and the Goal of Stable Efficient Amorphous Silicon-Based Solar Cells, Solar Cells, 30, 255, (1991)
  11. C.M. Fortmann, R.M. Dawson, and C.R. Wronski,"Charge-Defect Equilibrium Description of the Metastable Defect Concentrations", J. Non-Crystalline Solids 137&138 (1991) 207-210
  12. T. Unold, J.D. Cohen and C.M. Fortmann,"Density of States and Carrier Dynamics in Amorphous Silicon Germanium Alloys and Amorphous Germanium", J. Non-Crystalline Solids 137&138 (1991)
  13. P.M. Fauchet, D.A. Young, W.L. Nighan and C.M. Fortmann, "Picosecond Carrier Dynamics in a-SiGe:H Measured with Free Electron Laser", IEEE J. of Quantum Electronics, 27 (12) p.2714, (1991)
  14. C.M. Fortmann and D. Fischer, "The relationship among mobility, recombination kinetics, and optimized solar cell performance", Appl. Phys. Lett., 62, 3147, June 14, (1993)
  15. D.M.A. Dawson, C.M. Fortmann, C.R. Wronski, " Effects of Microstructure on Transport Properties of Undoped Hydrogenated Amorphous Silicon Films", Appl. Phys. Lett. 63, (7) Aug. 16, (1993)
  16. C.M. Fortmann, D.M.A. Dawson, M. Gunes, C.R. Wronski, "Amorphous silicon dispersive transport considerations for analysis of films and solar cell stability" Journal of Non-crystalline Solids,164-166 (1993) North-Holland, Netherlands, 509-512
  17. H. Keppner, P. Torres, R. Fluckiger, J. Meier, A. Shah, C. Fortmann, P. Fath, G. Willeke, K. Happle, H. Kiess, “Passivation properties of amorphous microcrystalline silicon layersdeposited by VHF-GD for crystalline solar cellls”, Solar Energy Materials and Solar Cells, 34 (1994) 201-209
  18. T. Unold, J.D. Cohen, C.M. Fortmann, “Electronic mobility gap structure and deep defects in amorphous silicon-germanium alloys” Appl. Phys. Lett. 64 (13) 28 March (1994), pp.1714-1716
  19. C.M. Fortmann, "Atomic vibration mediated electronic transport in amorphous silicon", Appl. Phys. Lett. 64 (22), 30 May (1994), pp. 3024-3026
  20. C.M. Fortmann, R.M. Dawson, H.Y. Liu, C.R. Wronski, "Charge-defect thermodynamic equilibrium and 'meta-stable' defects in amorphous silicon" J. Appl. Phys. 76 (2) 15 July 1994 p. 768
  21. D. He, N. Okada, C.M. Fortmann, I. Shimizu, "Carrier transport in polycrystalline silicon films deposited by a layer-by-layer technique", J. Appl. Phys. 76 (8), 15 October 1994, pp. 4728 - 4733
  22. W. Futako, K. Yoshino, K. Nakamura, C.M. Fortmann, I Shimizu, “Fabrication of high quality silicon related films with band gaps of 1.5 eV by chemical annealing”, Journal of Non-crystalline Solids, 198-200, (1996), pp. 1046-1049
  23. C.M. Fortmann, I. Shimizu, “Prospects for utilizing low temperature amorphous to crystalline phase transformations to define circuit elements: a new frontier for very large scale integrated technology”, Journal of Non-crystalline Solids, 198-200, (1996), pp. 1146 - 1150
  24. R. M. A. Dawson and C.M. Fortmann “The Staebler-Wronski effect and the thermal equilibration of defect carrier concentrations” Journal of Applied Physics, 79, (6), 15 March (1996), p. 3075
  25. K. Winz, C.M. Fortmann, Th. Eichkoff, C. Beneking, H. Wagner; and, H. Fujiwara and I. Shimizu, “Novel light trapping schemes involving planar junctions and diffuse rear reflectors for thin film silicon-based solar cells”, Solar Energy Materials and Solar Cells, 49, (1997) 195-203
  26. W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu, “High photoconductivity gain over 10 at high electric field obtained in wide gap a-Si:H”, J. Non-crystalline Solids, 227-230 (1998) 220-224
  27. K. Fukutani, M. Kanbe, W. Futako, B. Kaplan, T. Kamiya, C.M. Fortmann, I. Shimizu, “Bandgap tuning of a-Si:H from 1.55 eV to 2.10 eV by intentionally promoting structural relaxation”, J. Non-crystalline Solids, 227-230 (1998) 63-67
  28. T. Kamiya, K. Nakahata, A. Miida, C.M. Fortmann, and I Shimizu, “Control of orientation from random to (220) or (400) in polycrystalline silicon films” Thin Solid Films, 337 (1999) pp.18-22
  29. Kouichi Nakahata, Atsushi Miida, Toshio Kamiya, Yoshiteru Maeda, Charles Michael Fortmann, Isamu Shimizu, “Control of orientation for polycrystalline silicon thin films fabricated from fluorinated source gas”, Jpn. J. Appl. Phys. Lett. 37 [9AB] (1998) L1026-L1029
  30. W. Futako, Shinya Takeoka, Charles M. Fortmann, and Isamu Shimizu, Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing, J. Appl. Phys., 84, No. 4, 1 August 1998, pp. 1333-1339
  31. W. Futako C.M. Fortmann, I. Shimizu, “Wide band gap amorphous silicon thin films prepared by chemical annealing”, J. Appl. Phys..,85, 2, 15 January 1999, pp.812-818
  32. C.M. Fortmann “Random phononic structure and indirect optical transitions: an explanation for the hydrogen dependence of the amorphous silicon band gap?” Phys. Rev. Lett. 81, 17, 26 Oct. 1998 pp. 3683-3686
  33. Toshio Kamiya, Kazuyoshi Ro, Charles M. Fortmann, and I. Shimizu, “Role of seed layer in two-step-growth procedure for low temperature growth of polycrystalline silicon thin film from SiF4 by remote-type microwave plasma enhanced chemical vapor deposition”, Jpn. J. Appl. Phys., 38 (1999) pp. 5762-5767 (A03, A10)
  34. Satoshi Shimizu, Takashi Komaru, Kojiro Okawa, Masanobu Azuma, Toshio Kamiya, C.M. Fortmann and Isamu Shimizu, “Fabrication of solar cells having SiCl2H2,based I-layer materials” Jpn. J. of Appl. Phys. Vol. 38 (1999) pp. 6617-6623 (A03, A07)
  35. Kouichi Nakahata, Kazuyoshi Ro, Atsushi Suemasu, Toshio Kamiya, Charles Michael Fortmann, and Isamu Shimizu, “Fabrication of polycrystalline silicon films from SiF4/H2/SiH4 gas mixture using very high frequency plasma enhanced chemical vapor deposition with in-situ plasma diagnostics and their structural properties” Jpn. J. of Appl. Phys. Vol. 38 (2000) pp. 3294-3301 (A03, A01)
  36. K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu, H. Stuchlikova, A. Fajfar, J. Koeka, “Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very high frequency enhanced chemical vapor deposition using fluorinated source gas”, Journal of Non-Crystalline Solids, 266-269 (2000), 341
  37. Wataru Futako, Toshio Kamiya, Charles M. Fortmann, and Isamu Shimizu, “The structure of 1.5 to 2.0 eV band gap amorphous silicon films prepared by chemical annealing”, Journal of Non-Crystalline Solids, , 266-269 (2000), 630
  38. K. Ro, K. Nakahata, T. Kamiya, C.M. Fortmann, and I. Shimizu, “Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gas”, Journal of Non-Crystalline Solids, , 266-269 (2000), 1088
  39. T. Kamiya, K. Nakahata, C.M. Fortmann, and I. Shimizu, “Structural properties of polycrystalline silicon films having varied texture fabricated with intentional control of surface reactions using SiF4/H2/SiH4 mixing gas”, Journal of Non-Crystalline Solids, , 266-269 (2000), 120
  40. N. Hata, P. Stradins, C.M. Fortmann, H. Fujiwara, M. Kondo, and A. Matsuda, “Light-induced, reversible, above gap optical changes in hydrogenated amorphous silicon films”, Journal of Non-Crystalline Solids, 266-269 (2000) 491-495
  41. Takashi Komaru, Satoshi Shimizu, Mika Kanbe, Yoshiteru Maeda, Toshio Kamiya, Charles Michael Fortmann, and I. Shimizu, “Optimization of transparent conductive oxide for improved resistance to reactive and/or high temperature optoelectronic device processing” Jpn. J. Appl. Phys. 38 (1999) pp. 5796-5804 (A07, A03)
  42. Toshio Kamiya, Kouichi Nakahata, Kazuyoshi Ro, Charles Michael Fortmann, and Isamu Shimizu, “Comparison of microstructure and crystal structure of polycrystalline silicon films exhibiting varied textures fabricated by microwave and very high frequency plasma enhanced chemical vapor deposition and their transport properties”, J Jpn. J. of Appl. Phys. Vol. 38 (1999) pp. 5750-5756 (A03, A01)
  43. C.M. Fortmann1, E.L. Jaen1, N. Hata2, W.A. Anderson3, and A.H. Mahan, “Hot Wire Deposition of Photonic Grade Amorphous Silicon” Thin Solid Films, 395 (2001) 142-146
  44. C.M. Fortmann, A.H. Mahan, and N. Hata, “Advances in Amorphous silicon-based photonic technology” Journal of Non-Crystalline Solids, 299-302 (2002) 1267-1271
  45. C.M. Fortmann, A.H. Mahan , Scott Ward, W.A. Anderson, R. Tonucci, N. Hata “Hot-wire photonics: materials, science, and technology” Thin Solid Films 430 (2003) pp.278-282
  46. Yeona Kang, Enrique Jaen, C.M. Fortmann, “Einstein relations for energy coupled particle systems” Appl. Phys. Lett. 88, 11, (2006) 112110-1-112110-3
  47. Yeona Kang, Enrique Jaen, C.M. Fortmann, “A structural basis for the Hodgkin and Huxley relation” Appl. Phys. Lett. 91, 22, (2007) pp. 223903-1-223903-3
  48. J.A. Mawyin, S.G. Chawda, G.P. Halada, C.R. Clayton, R.J. Tonucci, C.M. Fortmann, “Substrate engineering for high efficiency thin film solar cells”, J. Non-Cryst. Solids (2008) in press
  49. S.G. Chawda, J.A. Mawyin, G.P. Halada, C.M. Fortmann, “Phononic engineered materials and devices” J. Non-Cryst. Solids (2008) in press


Book Chapters, Symposium papers, and, Other Publications:


  1. V.L. Dalal, C.M. Fortmann, E. Eser, "F-etched a-Si Films," in Tetrahedrally Bonded Amorphous Semiconductors," R.A. Street, D.K. Biegelsen, J.C. Knights, eds., AIP, New York, (1981) pp. 15-19
  2. W. Huber, A. Lopez-Otero, C. Fortmann, A.L. Fahrenbruch, R.H. Bube, “Fabrication of CdTe Solar Cells by Hot Wall Vacuum Evaporation” Proc. of 15th IEEE Photovoltaics Specialists Conf. (1981) IEEE, NY, pp. 1062-1065
  3. C.M. Fortmann, A.L. Fahrenbruch, R.H. Bube, "Control of Voc for CdS/CdTe Solar Cells by Variation of the Relative Carrier Density," Proc. of the 18th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, (1986), pp.1383-1386
  4. T. Anthony, C. Fortmann, W. Huber, A. Fahrenbruch, R.H. Bube, “CdS/CdTe Solar Cells by Close -spaced Vapor Transport and Hot Wall Vacuum Deposition”, Proc. of the 17th IEEE Photovotaics Specialists Conference, (1984), IEEE Press, NY, pp. 827-834
  5. C.M. Fortmann, K. Rajan, S. Lange, "High Efficiency a-Si:H Solar Cells, Stability and Structure as a Function of Growth Rate," Proc. of the 7th E.C. Photovoltaic Solar Energy Conference, Sevilla, Spain (1986), pp. 435-440
  6. C.M. Fortmann, J. O'Dowd, J. Newton and J. Fischer, "Light Induced Degradation and Structure of High Efficiency a-Si:H, a-SiGe:H and a-SiC:H Solar Cells," AIP Conf. Proc. 157, R. Lerner Series Ed. on Stability of Amorphous Silicon Alloy Materials and Devices, B.L. Stafford and E. Sabisky, eds., AIP, NY (1987), pp. 103-110
  7. A. Catalano, R.R. Arya, C.M. Fortmann, G. Wood, "High Performance, Graded Band Gap a-Si:H Solar Cells," Proc. of the 19th IEEE Photovoltaic Specialists Conf., New Orleans, LA, (1987), pp. 1506-1507.
  8. C.M. Fortmann, S. Lange, M. Farley, J. O'Dowd, "High Efficiency Solar Cells of a-Si:H, a-SiC:H, and a-SiGe:H Stability and Structure as a Function of Growth Rate," Proc. of the 19th IEEE Photovoltaic Specialists Conf., New Orleans, LA, (1987), pp. 296-301
  9. C.M. Fortmann, M. Smott, M. Farley, B. Fieselmann,"Safe Gas Handling and System Design for the Large Scale Production of Amorphous Silicon Solar Cells," in AIP Conf. Proc. 166, W. Luft, ed., AIP, NY (1988), pp. 129-137
  10. A. Catalano, C.M. Fortmann, J. Newton, R.R. Arya and G. Wood, "High Efficiency a-SiC:H Single and Stacked Junction Solar Cells," Proc. 3rd Intl. Photovoltaic Science and Engineering Conf., Tokyo, Japan (1987).
  11. C.M. Fortmann and S. Lange, "Towards a Better Understanding of the Staebler-Wronski Effect," Proc. of the 8th European Photovoltaic Solar Energy Conf., Florence, Italy (1988), pp. 929-934
  12. R.R. Arya, J.L. Newton, C.M. Fortmann and A. Catalano, “High efficiency single and stacked junction a-Si:H based solar cells” Proc. of the 8th European Photovoltaic Solar Energy Conf., Florence, Italy (1988), pp. 935-939
  13. C.M. Fortmann, "The Role of Structural Inhomogeneities on the Transport Properties of a-SiGe:H," Mat. Res. Soc. Symp. Proc. 118, (1988), pp.691-696
  14. C.M. Fortmann, "Equilibrium Between Charge Carriers, Charged Centers and Dangling Bonds in Amorphous Silicon," Mat. Res. Soc. Symp. Proc. 118, (1988), pp.129-134
  15. C.M. Fortmann, "Defects in a-SiGe:H," Proc. 20th IEEE Photovoltaic Specialists Conf., Las Vegas, NV, 139 (1988).
  16. D.A. Albright, C.M. Fortmann, T.W.F. Russell, "Effects of Hydrogen Radicals on the Composition and Hydrogen Bonding of Amorphous Silicon-Germanium Thin Films," Mat. Res. Soc. Symp. Proc. 149, 521 (1989).
  17. N. Saxena, C.M. Fortmann, T.W.F. Russell, "Microcrystallinity in a-Si and a-Si:C Films Made by Hg Sensitized Photo-CVD," Mat. Res. Soc. Symp. Proc. 149, 99 (1989).
  18. C.M. Fortmann, D.E. Albright, I.H. Campbell, P.M. Fauchet, “The effect of hydrogen on the structure and electrical and optical properties of silicon-germnium alloys” Mat. Res. Soc. Symp. Proc. 164, (1989), pp. 315-320
  19. C.M. Fortmann, "A-SiGe:H Alloy Material Limitations and Device Considerations," Proc. 21st IEEE PVSC, Orlando, FL, (1990) pp. 1493-1500
  20. C.M. Fortmann and T. Zhou, "Deposition Conditions, Hydrogen Content, and the Staebler-Wronski Effect in Amorphous Silicon", Proc. 21st IEEE PVSC, Orlando, FL, 1648 (1990).
  21. C.M. Fortmann, Invited Paper "Prospects of a-SiGe:H Alloys for Solar Cell Application," Mat. Res. Soc. Symp. Proc. 192, Amorphous Silicon Technology - 1990, 27 (1990).
  22. C.M. Fortmann, R.M. Dawson, and C.R. Wronski, "Charge-Defect Equilibrium Description of the Staebler-Wronski Defect Concentration and Formation Energy", Mat. Res. Soc. Symp. Proc. Vol. 219, 63 (1991)
  23. T.X. Zhou, S.S. Hegedus, and C.M. Fortmann, "Critical Assessment of Sub-Bandgap Primary Photocurrent in a-Si:H Solar Cells", Mat. Res. Soc. Symp. Proc. Vol. 219, 451 (1991)
  24. C.M Fortmann and J.D. Cohen, "Charge Defect Thermodynamic Equilibrium and Metastable Defects in Amorphous Silicon", Mat. Res. Symp. Proc. Vol. 258, p.383, Materials Research Society, Pittsburgh, PA, USA (1992)
  25. T. Unold, J.D.Cohen, C.M. Fortmann, "Effects of Light Soaking on the Density of States and Carrier Dynamics of a-Si1-xGex:H Alloys", Mat. Res. Symp. Proc. Vol. 258, p.499, Materials Research Society, Pittsburgh, PA, USA (1992)
  26. D.A. Young, P.M. Fauchet, Y.M. Liu, W.L. Nigham Jr., C.M. Fortmann,"Free Carrier Lifetime in a-SiGE:H Alloys", Mat. Res. Symp. Proc. Vol. 258, p.807, Materials Research Society, Pittsburgh, PA, USA (1992)
  27. D. Fischer, N. Pellaton, H. Keppner, A. Shah, C.M.Fortmann,"Effects of Low Level Graded i-layer Doping on the Stability of a-Si:H Solar Cells", Mat. Res. Symp. Proc. Vol. 258, p.887, Materials Research Society, Pittsburgh, PA, USA (1992)
  28. D. Fischer, N. Pellaton, H. Keppner, A. Shah, C.M. Fortmann,"Room Temperature Recovery of Light Induced Degradation in a-Si:H Solar Cells", Mat. Res. Symp. Proc. Vol. 258, p.893, Materials Research Society, Pittsburgh, PA, USA (1992)
  29. C.R. Wronski, N. Maley, T.M. Peterson, J.R. Abelson, M.B. Bennett, P.K. Bhat, R. Biswas, V.L. Dalal, A.E. Dalahoy, S.J. Fonash, C.M. Fortmann, S. Guha, W. Luft, T. McMahon, D. Redfield, P.C. Taylor and S. Wagner, "Findings of the Stable Materials Advisory Research Team" proceedings of 11th E.C. Photovoltaic Solar Energy Conference held at Montreux, Switzerland 12-16 October 1992, p.72 Harwood Academic Press, Langhorne, PA, USA (1992)
  30. D. Fischer, N. Pellaton, A. Shah, C.M. Fortmann, "Electric Field Profiling by Low Level Graded Doping for Improved Stabalized Performance of a-Si:H and a-SiGe:H Stacked Solar Cells" proceedings of 11th E.C. Photovoltaic Solar Energy Conference held at Montreux, Switzerland 12-16 October 1992, p.560 Harwood Academic Press, Langhorne, PA, USA (1992)
  31. C.R. Wronski, F. Rubinelli, R.M. Dawson, C.M. Fortmann, and S.J. Fonash, "Mobility Gap in a-Si:H Based Materials and Effect on the Solar Cell Performance", Technical Digest of Fifth "Sunshine" Workshop on Solar Cells held at Tokyo Kosei-Nenkin Hall, Shinjuku, Tokyo, Japan, 8-9 December 1992
  32. C.M. Fortmann and D. Fischer, "Mobility Recombination Kinetics, and Solar Cell Performance", Proc. of the 23rd IEEE Photovoltaic Specialist Conference, Louisville, KY May 11-15 (1993)
  33. D. Fischer, N. Wyrsh, C.M. Fortmann, A.V. Shah, "Amorphous Silicon Solar Cells with Graded Low-level Doped I-layers Characterized by Bifacial Maesurements" Proc. of the 23rd IEEE Photovoltaic Specialist Conference, Louisville, KY May 11-15 (1993)
  34. R.M.A. Dawson, C.M. Fortmann, M. Gunes, C.R. Wronski, "Transport Considerations in Hydrogenated Amorphous Silicon Materials wirh Widely Varying Mobilities and the Consequences for Device Performance" Proc. of 23rd IEEE Photovoltaic Specialist Conference, Louisville, KY May 11-15 (1993)
  35. M. Gunes, Y.M. Li D.M.A. Dawson, S. Nag, C.M. Fortmann, C.R. Wronski, Investigation of Intrinsic and Light Induced Defect States in Hydrogenated Amorphous Silicon Films Using Steady-State Photoconductivity and Sub-bandgap Absorption" Proc. of the 23rd IEEE Photovoltaic Specialist Conference, Louisville, KY May 11-15 (1993)
  36. D.M.A. Dawson, C.M. Fortmann, Y.M. Li, C.R. Wronski, “The Staebler-Wronski effect and the thermal equilibration of defect carrier concentrations”, Mat. Res. Soc. Symp. Proc. Vol. 336, (1994) Materials Research Society, Pittsburgh, PA, p. 251
  37. C.M. Fortmann, Book Chapter, Deposition Conditions and the Electronic Properties of Amorhous Silicon Alloys, Chapter 3, Plasma Deposition of Amorphous Silicon-Based Materials, edited by., G. Bruno, P. Capezzuto, A. Madan, (1995) Academic Press, NY pp. 131-172
  38. C.M. Fortmann "Amorphous silicon deposition conditions, electron mobility and solar cell stability" Proc. of 7th NEDO Sunshine Workshop" held in Tokyo, Japan (1993), p. 49
  39. V. Suntharalingam, C.M. Fortmann, S.J. Fonash, “The p/i interface layer in amorphous silicon solar cells; a numerical study”, in the Proceedings of 1994 IEEE First World Conference on Photovoltaic Energy Conversion (WC PVEC), (1994) IEEE Press NY p. 618
  40. Yiwei Lu, Sangbo Kim, Ing-Shin Chen, Yeeheng Lee, C.M. Fortmann, C.R. Wronski, R.W. Collins, “Real time characterization of the preparation of amorphous silicon-based solar cells”, in the Proceedings of 1994 IEEE First World Conference on Photovoltaic Energy Conversion (WC PVEC), (1994) IEEE Press NY p. 421
  41. Mehmet Gunes, Hongue Liu, C.M. Fortmann, C.R. Wronski, “Direct Correlations of bulk charged and neutral defect densities of states in a-Si:H films with characteristics of schottky barrier solar cell structures”, in the Proceedings of 1994 IEEE First World Conference on Photovoltaic Energy Conversion (WC PVEC), (1994) IEEE Press NY p. 512
  42. C.M. Fortmann “Stress and the goal of improved amorphous silicon stability”, Mat. Res. Soc. Symp. Proc. Vol. 377, Amorphous Silicon Technology, (1995), Material Research Society, Pittsburgh, PA, p. 355
  43. H. Liu, C.T. Malone, C.M. Fortmann, C.R. Wronski “Self consistent modeling of solar cell structures using a DOS derived from film analysis” Mat. Res. Soc. Symp. Proc.377, Amorphous Silicon Technolgy , (1995), Material Research Society, Pittsburgh, PA, p. 687
  44. C.M. Fortmann, P. Hapke*, A. Lambertz*, F. Finger* “Low temperature hydrogen induced amorphous to crystalline silicon phase transformations”,Mat. Res. Soc. Symp. Proc. Vol. 420, Amorphous Silicon Technology - 1996, Materials Research Society, Pittsburgh, PA, pp. 283 – 288
  45. K. Winz, B. Rech, Th. Eichkoff, C. Beneking, C.M. Fortmann, P. Hapke, H. Wagner, “Optoelectronic properties of thin amorphous and micro-crystalline p-type films developed for amorphous silicon-based solar cells”, Mat. Res. Soc. Symp. Proc. Vol. 420 Amorphous Silicon Technology - 1996, Materials Research Society, Pittsburgh, PA pp. 819-824
  46. W. Futako, and I. Shimuzu, and C.M. Fortmann, “Modulation of growth surface with atomic hydrogen and excited argon to fabricate narrow gap a-Si:H”, Mat. Res. Soc. Symp. Proc. Vol. 420 Amorphous Silicon Technology - 1996, Materials Research Society, Pittsburgh, PA pp. 431-436
  47. K. Winz, C.M. Fortmann, Th. Eichoff, C. Beneking, B. Rech, O. Kluth, H. Wagner, “Smooth TCO/glass substrates and diffuse rear reflectors for efficient low cost amorphous silicon-based solar cells”, Proc. of the 25th IEEE Photovoltaic Specialists Conference, (1996), IEEE, Piscataway, NJ, pp. 1149 – 1152
  48. K. Winz, C.M. Fortmann, Th. Eichkoff, H. Wagner; and, H. Fujiwara and I. Shimizu, “Novel light trapping schemes involving planar junctions and diffuse rear reflectors for thin film silicon-based solar cells” Technical Digest of the International Photovoltaic Science and Engineering Conference - 9, Miyazaki, Japan, 1996, p. 377-378
  49. K. Winz, C.M. Fortmann, Th. Eickhoff, H. Wagner “ Optical optimization of amorphous silicon solar cells using planar junctions and diffuse rear reflectors” Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, 1997, IEEE Inc., Picataway, NJ 723-726
  50. W. Futako, K. Fukutani, M. Kanbe, T. Kamiya, C.M. Fortmann, I. Shimizu, “Progress in Growth of High Quality Amorphous Silicon Materials” Proceedings of the 26th IEEE Photovoltaic Specialists Conference, Anaheim, CA, 1997, IEEE Inc., Picataway, NJ, 581-585
  51. M. Kanbe, Y. Yamamoto, K. Fukutani, T. Kamiya, C.M. Fortmann, I. Shimizu, “Narrow gap amorphous silicon solar cells prepared by high temperature processing”, Mat. Res. Soc. Symp. Proc. Vol. 507, (1998) MRS , Pittsburgh, PA pp.205-210
  52. K. Fukutani, T. Sugawara, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu, “Extremely narrow gap ~ 1.5 eV amorphous silicon”, Mat. Res. Soc. Symp. Proc. Vol. 507, (1998) MRS , Pittsburgh, PA pp.211-216
  53. Y. Yamamoto, W. Futako, K. Fukutani, M. Hagino, T. Sugawara, T. Kamiya, C.M. Fortmann, I Shimizu, “ Stable wide gap solar cells prepared by low temperature processing”, Mat. Res. Soc. Symp. Proc. Vol. 507, (1998) MRS , Pittsburgh, PA pp.199-204
  54. W. Futako, T. Sugawara, T. Kamiya, C.M. Fortmann, I. Shimizu, “Wide gap a-Si:H based high gain vidicon devices prepared by chemical annealing” Mat. Res. Soc. Symp. Proc. Vol. 507, (1998) MRS , Pittsburgh, PA pp.357-362
  55. M. Kanbe, T. Komaru, K. Fukutani, T. Kamiya, C.M. Fortmann, I. Shimizu, “Amorphous silicon solar cell techniques for high temperature and/or reactive deposition conditions” Mat. Res. Soc. Symp. Proc. Amorphous Silicon Technology-1999, Vol. 557, Howard M. Branz, Robert W. Collins, Hiroaki Okamoto, Subhendu Guha, Ruud Schropp, eds. 1999 MRS, Pittsburgh, PA, pp.767-772
  56. Toshio Kamiya, Kouichi Nakahata, Kazuyoshi Ro, C.M. Fortmann and I. Shimizu “High rates and very low temperature fabrication of polycrystalline silicon from fluorinated source gas and their transport properties”, Mat. Res. Soc. Symp. Proc. Amorphous Silicon Technology-1999, Vol. 557, Howard M. Branz, Robert W. Collins, Hiroaki Okamoto, Subhendu Guha, Ruud Schropp, eds. 1999 MRS, Pittsburgh, PA pp. 513-518
  57. Satoshi Shimizu, Kojiro Okawa, Toshio Kamiya, C.M. Fortmann, and Isamu Shimizu, “Amorphous silicon solar cell techniques for reactive conditions”, Mat. Res. Soc. Symp. Proc. Amorphous Silicon Technology-1999, Vol. 557, Howard M. Branz, Robert W. Collins, Hiroaki Okamoto, Subhendu Guha, Ruud Schropp, eds. (1999) MRS, Pittsburgh, PA, pp.791-796
  58. C.M. Fortmann and E.L. Jaen, “Prospects for 3-D photonic crystals engineered from hydrogenated amorphous silicon” in Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications V, Francis T.S. Yu, Shizhuo Yin, Editors, Proceedings of SPIE Vol. 3801, 1999, 24-35
  59. Nobuhiro Hata and C.M. Fortmann, “The emergence of an amorphous-silicon based photonic technology; optical memory to 3-D photonic crystals”, Mat. Res. Soc. Symp. Proc. Amorphous and Heterogeneous Silicon Films-2000, editors: Robert W. Collins, Howard M. Branz, Martin Stutzmann, Subhendra Guha, Hiroaki Okamoto, Mat. Res. Soc. Symp. Proc. 609, (2000) MRS, Warrendale, PA, A12.11
  60. T. Kamiya, K. Nakahata, A. Suemasu, K. Ro, C.M. Fortmann, I. Shimizu, “Transport properties of polycrystalline silicon with various textures and microstructures” Mat. Res. Soc. Symp. Proc. Amorphous and Heterogeneous Silicon Films-2000, editors: Robert W. Collins, Howard M. Branz, Martin Stutzmann, Subhendra Guha, Hiroaki Okamoto, Mat. Res. Soc. Symp. Proc. 609, (2000) MRS, Warrendale, PA, A27.1
  61. C.M. Fortmann, E.L. Jaen, and N. Hata, Invited Paper “Prospects of Amorphous Silicon-based Photonic Networks” Photorefractive Fiber and Crystal Devices, Optical Properties, and Applications VI, Shizhou Yin, Francis T. Yu, Editors, Proceedings of the SPIE Vol. 4110 (2000) 195-203
  62. N. Hata, C.M. Fortmann, and A. Matsuda, “Fast light induced change in ellipsometry spectra of hydrogenated amorphous silicon measured through a transparent substrate upon bias light illumination” Mat. Res. Soc. Symp. Proc. . Vol. 664, (2001) Materials Research Society, Warringdale, PA, p. A19.5.1
  63. N. Hata, C.M. Fortmann, A. Matsuda, “Changes in hydrogenated amorphous silicon upon extensive light soaking at elevated temperature”, Mat. Res. Soc. Symp. Proc. Vol. 664, (2001) Materials Research Society, Warringdale, PA, p. A12.6.1
  64. C.M. Fortmann, E.L. Jaen, W.A. Anderson, A.H. Mahan, and N. Hata, Invited Paper, “Progress in deposited refractive index engineered materials and devices”, Proceeding of the SPIE, Vol. 4459 (2001) SPIE, Bellingham, WA, 10-19
  65. C.M. Fortmann and N. Hata, Invited Paper, “High-speed light induced photo refractive change in hydrogenated amorphous silicon”, Proceeding. of the SPIE, Vol. 4803, (2002) SPIE, Bellingham, WA, 1-10
  66. C.M. Fortmann, A.H. Mahan , W.A. Anderson, R. Tonucci, N. Hata, Invited Paper, “Photorefractive nano-crystalline silicon: materials, science, and application”, Proc. of Photonic Asia, Shanghai China, Sept. 2002, SPIE 4929, 312-322
  67. C.M. Fortmann, Book Chapter, “Refractive Index Engineered Amorphous Silicon Photonic Materials and Devices” in Physics and Applications of Disordered Materials, Mihai Popescu, ed. (2002) INOE Publishing House, Bucharest, pp. 349-364
  68. C.M Fortmann, R.J. Tonucci, , W.A. Anderson, C.W. Teplin, A.H. Mahan, Invited Paper, “Advances in thin film photonics: materials, science and devices” Proc. SPIE 5206, Photorefractive Fiber and Crystals Devices: Materials, Optical Properties, and Applications IX, edited by Francis T.S. Yu and Ruyan Guo, Shizhuo Yin (2003), p.14
  69. C.M. Fortmann, Book Chapter, “Chapt. 14, Amorphous silicon photonics”, INOE Publishing House Series: Optoelectronic Materials and Devices, ISSN 1584-5508 Vol. 1, 2004, Non-crystalline Materials for Optoelectronics , ISBN 973-85818-0-X, pp. 393-416
  70. G.P. Halada, Samrat Chawda, J. Mawyin, R.J. Tonucci, A.H. Mahan, C.M. Fortmann, “Advances in amorphous silicon integrated photonic s science and tecchnology” ” Mat. Res. Soc. Symp. Proc. Vol. 862 (2005) A9.1.1-A9.1.6
  71. C.M. Fortmann, J. Mawyin, R.J. Tonucci, A.H. Mahan, “Photonic amorphous silicon device technology” Thin Solid Films, 501, (2006) 350-353
  72. Samrat Chawda, Jose Mawyin, A.H. Mahan, Gary Halada, C.M. Fortmann, “Phononic amorphous silicon: theory, material, and devices” Mat. Res. Soc. Symp. Proc. Vol. (2006)



Patents:

  1. J. O'Dowd, Anthony W. Catalano, Charles M. Fortmann, Ora J. Lee, “Method of Depositing Textured Tin Oxide” U.S. Patent #4,880,664, Nov. 14, 1989
  2. J. O'Dowd, Anthony W. Catalano, Charles M. Fortmann, Ora J. Lee, “Textured Tin Oxide” U.S. Patent #5,102,721 Issued Apr. 7, 1992
  3. C.M. Fortmann, S. Luryi, R. Tonucci, J.H. Coleman, “ Fabrication Methods and Structured Materials for Photonic Devices ” US 6,064,511 issued May 16, 2000
  4. C.M. Fortmann and N. Hata, “ O ptical memory method and optical switching method as well as optical memory device and optical switching device” Japanese Patent Number: 3612453 issued October 29, 2004; Application number: JP19990273442; Priority numbers: IPC Classification: G11C17/00; G02F1/00; H01L27/10 (Patent Application: Heisei 11-273442 Date of application September 27, Heisei 11. (1999); publication date April 13, 2001, published application number: P2001-1018787A)
  5. C.M. Fortmann, “Condensed Material and Devices” pending, filed April 2, 2005
  6. C.M. Fortmann, Yeona Kang, “ Protein autonomous folding units, folding dynamics and structure” provisional patent applied May 24, 2006

Review panels:

May 1993 (3 week) Leader of the United Nations Development Program review team which evaluated solar energy research (amorphous silicon-based) at the Indian Association for the Cultivation of Science, Calcutta, India

August 1994 (3 days) Panel member for the review of Department of Energy funded solar energy research in the area of solar cell testing.

December 1994 (3 days) Panel member for the review of Department of Energy funded solar energy research in the area of thin film poly-crystalline solar cells.

March 2002, National Science Foundation, NIRT 38 proposal review panel

June 2003, Japanese New Energy Development Organization, Grant Review

Consulting:

University of Neuchatel, Neuchatel Switzerland (1991-1995)
United Nations Development Program (1992)
Research Center Juelich, Juelich Germany (1994-1998)
Plasma Physics Corp. (1993-1999)
Department of Energy (1993-1994)
Stanford University (1997-2000)

Recently Funded Research Projects:

March July 2002-present: Solar Physics Corp, Long Island NY; Stony Brook University Sensor Center for Advanced Technology; NYS Strategic Partnership of Industrial Resurgence “Nano-structured thin silicon: materials, electronic, and photonic devices” ~$600K total thus far, extensions expected


Dec 15, 2002 - Dec 14, 2003: Biota Corp, Long Island, NY ; Stony Brook University Sensor Center for Advanced Technology, NYS Strategic Partnership of Industrial Resurgence, “Agent Simulation of the Life cycle” $50K


March 2000-July 2002: Solar Physics Corp, Long Island NY; Stony Brook University Sensor Center for Advanced Technology, “Simulation of the crystallization of amorphous silicon” 2000, $50K; 2001, $50K


April 1997-Jan 2000: Tokyo Institute of Technology and New Energy Development Organization (Japan) , (approximate title) “Studies of amorphous silicon materials, solar cells, and polycrystalline single electron transistors.


March 1997-Dec 1999: Stanford University subcontract of a DARPA project entitled: New processes and materials for 25 nm scale Si MOSFETs: High quality multi-layer silicon-on-insulator, and gate material band structure engineering, the subcontract entitled: Computer simulation of amorphous silicon crystallization” $13K/yr for three years, $39K total


April 1995-April 1997: New York State Energy Research and Development Authority and Plasma Physics Corp, Long Island NY, “Improved crystalline silicon solar cells with amorphous silicon emitter layers” $75K/year ($150K total)


June 1993-June 1995: New Energy Development Organization (Japan), “Fundamental studies of film growth to improve the stability of amorphous silicon based materials” $50K/year two years ($100K total)


1988 - 1993: National Renewable Energy Laboratory, (approximate title) “Improved amorphous silicon alloy solar cells” (~ $235K/year)


1992: Electric Power Research Institute, (approximate title)“Hydrogen and improved amorphous silicon-based solar cell stability” ($50K)


1985-1988: Solarex Thin Films Division, Internal Corporate Research,

Research Interests:

I am interested in the application of material science and computational techniques to important scientific problems including: protein folding, alternative energy production, photonics and phononics. In the area of protein folding I hope to advance the commercialization of a computational method to determine protein structure based upon an amino acid input (patent applied for 2006). Solar Physics Inc. is currently negotiating an exclusive license for this patent. The program will be extended to include more types of protein structures. I am interested in photonic devices and fabrication methods for the integration of electronic and optical devices into monolithic opto-electronic silicon circuits. My approach is based upon the nano-refractive index patterned engineering of amorphous silicon-based materials and devices described in a 2000 and a 2004 patents (both with others). I am particularly interested in the fabrication of all optical switching devices. Commercialization of the 2000 and the 2004 patents are underway. I am presently working on a project funded by Solar Physics Corp. of Long Island to build an amorphous silicon deposition capability in the Materials Science Dept. here at Stony Brook. I plan to continue my simulation and theoretical studies of amorphous silicon crystallization, something that is useful for the preparation of vertically integrated electronic circuits and the preparation of highly functional driver circuits on glass such as in the case of drivers integral with the display substrate for TFT displays. I plan to continue my studies of the preparation and analysis of microcrystalline silicon based materials for photovoltaic solar cells. Solar cells have become more important with recent increased oil prices. New avenues of research funding would also be sought. Recent developments include the prospect to generate, amplify, transduce to other energy forms, and guide phonon (acoustic) energy (patent application filed 4/2/2005).

Teaching Statement:

My mission as a teacher is to provide students with the confidence and the knowledge needed to make a positive contribution to the solution of engineering and scientific problems. I recognize that students are people with their own goals, needs, abilities and impediments. To accomplish my teaching mission I have recognized that the greatest progress is possible along the lines that interest both the teacher and the student and that an inherent trust relation between student and instructor enables progress. The student must trust that his or her efforts will be properly rewarded while the teacher requires the students make an honest effort to develop his or her knowledge and skill. The attainment of such an understanding is the product of effort, experience, and consideration.


I began teaching as a Peace Corps Volunteer in the Fiji Islands where I taught high school physics and mathematics for two years. I have gone on to teach at Universities in the US (Penn State, Univ. of Delaware, Stony Brook) and in Germany (graduate student one-on-one teaching), Japan (formal classes in opto-electronic materials as well as Grad student thesis supervision), and Switzerland (one-on-one graduate student teaching and thesis development) and the Philippines (formal graduate classes). I believe that my teaching flows from a natural interest and sense of responsibility for the development and well being of my students.

At Stony Brook I have taught Applied Math Calculus III (AMS 261) for fourteen semesters and Solid State Physics (ESG 281) for four semesters (counting the present semester).. Several important observations emerge. Students here are intelligent and driven, but, often are saddled with the extra work and worry of employment needed to pay for tuition and other needs. The variety of working conditions found in our student’s lives result in broad distributions of time resources. This then cascades to a teaching challenge characterized by a need to cover as much as possible within the confines of the scheduled classes and recitations while still engaging the energies of those having the resources for probing the deeper implications of the covered materials. The implied balance is possible only through the use of close coupled feedback and where necessary an availability for extra tutoring.


Feedback takes many forms, being approachable; instructor graded exams, maintaining close contact with teaching assistants as well as remembering my own experiences as a student who worked to cover expenses. Thereby, it is possible to establish matched standards, expectations, and exams that test proficiency in well-defined areas. Furthermore, I strive to maintain a level playing field in which outside paid tutoring is not needed. Thus far I have meet many of these challenges as evidenced by numerous departmental teaching awards, yet there is room for improvement as well as an ongoing requirement for diligence and awareness of an ever changing student landscape.Areas of teaching experience include: solid-state physics, junction transport, photoconductivity, photovoltaic, thin film deposition, alternate & renewable energy, solid-state physics, semi-conductor growth kinetics & thermodynamics, and engineering mathematics as well as the over-aching fields such as the global aspects of modern scientific inquiry.


Please look at the faculty and facilities of the Stony Brook Materials Department.

01/26/2008 JQ