ESG/ESM 339 Thin Film Processing of Advanced Materials
1. compare and contrast the underlying physics
and practice of the following:
a) Evaporation and Jet vapor deposition
b) Sputtering and Ion assisted deposition
c) Doping by thermal diffusion and ion implantation
d) PVD and CVD
e) Wet etching and Plasma etching
f) EPMA and SAM
g) XPS and SIMS
h) Sputtering and gas cluster Ion beam processing
2) Describe using examples, the importance of Vacuum
system design in thin film processing
3) Why is Silicon the basis of microelectronics industry?
(provide chemical and physical arguments for Silicons
superior manufacturing suitability)
4) Compare and contrast:
a) Diffusion and turbo pumping
b) Ion and Titanium sublimation pumping
c) Rotary and sorption pumping.
back to the ESG/ESM 339 home-page
02/09/99 JQ.