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- Figure 4.1: The T_4-^2 model for Si{111}rt3*rt3-30-Mg.
- Figure 4.2: The H_3^2 model for Ge{111}rt3*rt3-30-Pb.
- Figure 4.3: The T_1^2 model for Si{111}rt3*rt3-30-Pb.
- Figure 4.4: The H_3-T_4 model for Si{111}rt3*rt3-30-Au.
- Figure 5.1: The MCT-T_1-T_1-T_4 model for Si{111}rt3*rt3-30-Au.
- Figure 5.10: The relaxed MTL-H_3-T_1 model for Si{111}rt3*rt3-30-Au,
also denoted conjugate honeycomb chained-trimer, as determined by
a Keating energy-analysis.
- Figure 5.11: The relaxed MTL-H_3-T_1 model for Si{111}rt3*rt3-30-Ag,
also denoted honeycomb chained-trimer, as determined by
a Keating energy-analysis.
- Figure 5.12: The relaxed MTL-T_1-H_3 model for Si{111}rt3*rt3-30-Ag,
also denoted honeycomb chained-trimer, as determined by
a Keating energy-analysis.
- Figure 5.2:The MCT-T_1-T_1-H_3 model for Si{111}rt3*rt3-30-Au.
- Figure 5.3: The MCT-VT-T_1-T_4 model for Si{111}rt3*rt3-30-Au.
- Figure 5.4: The MCT-VT-T_1-H_3 model for Si{111}rt3*rt3-30-Au.
- Figure 5.5: The honeycomb (HC) model for Si{111}rt3*rt3-30-Au.
- Figure 5.6: Experimental AES data for Au/Si{111}.
- Figure 5.7: The MTL-T_4-H_3 model for Si{111}rt3*rt3-30-Au
- Figure 5.8: The MTL-T_4-T_1 model for Si{111}rt3*rt3-30-Au
- Figure 5.9: The relaxed MTL-T_1-H_3 model for Si{111}rt3*rt3-30-Au,
also denoted conjugate honeycomb chained-trimer, as determined by
a Keating energy-analysis.
- Figure 6.1: Schematic LEED patterns for Si{111}2*2-X and 2*1-X.
- Figure 6.2: Schematic unit-cells (a,c) and LEED patterns (b,d)
the ThSi_2 (a,b) and AlB_2 (c,d) polymorphs.
- Figure 2.4: Si{111}7x7 Diffraction Pattern
- Figure 2.7: AES Data Acquisition
- Figure 2.8: AES Spectrum
- Figure 5.13 Si{111}rt3*rt3-30-Au
- Figure 5.14 Si{111}rt3*rt3-30-Au
- Figure 5.15 Si{111}rt3*rt3-30-Au
- Figure 5.16 Si{111}rt3*rt3-30-Au
- Figure 5.17 Si{111}rt3*rt3-30-Au
- Figure 5.18 Si{111}rt3*rt3-30-Au
- Figure 5.19 Si{111}rt3*rt3-30-Au
- Figure 5.20 Si{111}rt3*rt3-30-Au
- Figure 5.21 Si{111}rt3*rt3-30-Au
- Figure 1.8: B_5 model
- Figure 3.1 Si{111}rt3*rt3-30-B
- Figure 3.2 Si{111}rt3*rt3-30-B
- Figure 3.3 Si{111}rt3*rt3-30-B
- Figure 3.4 Si{111}rt3*rt3-30-B
- Figure 3.5 Si{111}rt3*rt3-30-B
- Figure 3.6 Si{111}rt3*rt3-30-B
- Figure 2.5: LEED Data Acquisition
- Figure 2.3: Fractional-Order Diffraction Pattern
- Figure 4.5: H_3-T_1 model
- Figure 1.6: H_3 model
- There is no index for this directory
- Figure 2.1: Integral-Order Diffraction Pattern
- Figure 3.7 The H_3-, T_4-, and B_5-model structures
of the Si{111}rt3*rt3-30-X surface in the
unrelaxed (starting) state.
- Figure 3.8 The minimum Keating energies for the
H_3-, T_4-, and B_5-model structures
of the Si{111}rt3*rt3-30-X surface
as a function of the adsorbate's covalent radius.
- Figure 3.9 The H_3-, T_4-, and B_5-model structures
of the Si{111}rt3*rt3-30-Al surface in the
relaxed state, as determined by a Keating analysis.
- Figure 3.10 The H_3-, T_4-, and B_5-model structures
of the Si{111}rt3*rt3-30-B surface in the
relaxed state, as determined by a Keating analysis.
- Figure 3.11 The minimum Keating energies for the
H_3-, T_4-, and B_5-model structures
of the Ge{111}rt3*rt3-30-X surface
as a function of the adsorbate's covalent radius.
- Figure 4.7 Si{111}(2/3)rt3*(2/3)rt3-30-Mg
- Figure 4.8 Si{111}3*1-Mg
- Figure 4.9 Si{111}3*1-Mg
- Figure 4.10 Si{111}3*1-Mg
- Figure1.4: The Periodic Table of Elements
- Figure1.1 Reconstruction
- Figure 1.2: Relaxation
- Figure 2.1: Retarding Field Analyzer
- Figure 2.6: R-factor
- Figure 1.5: T_1 model
- Figure 4.6: T_4-T_1 model
- Figure 1.7: T_4 model
- Table 2.1: The Auger peaks of the elements studied.
- Table 3.1: The structural parameters for the relaxed B_5-model
surface of Si{111}rt3*rt3-30-B, as determined by
- Table 3.10: The structural parameters
for the relaxed T_4-model surfaces of
Ge{111}rt3*rt3-30-X, as determined by a Keating analysis.
- Table 3.11: The bond lengths and the Keating energies
for the relaxed T_4-model surfaces of
Ge{111}rt3*rt3-30-X, as determined by a Keating analysis.
- Table 3.2: The bond lengths and the Keating energies for the
relaxed B_5-model
surface of Si{111}rt3*rt3-30-B, as determined by
- Table 3.3: Three reliability factors ( (1/2)R_p, r_ZJ, and R_VHT ) for
the optimized B_5-model Si{111}rt3*rt3-30-B structure.
- Table 3.4: The structural parameters for the relaxed H_3-, T_4-, and
B_5-model surfaces of Si{11}rt3*rt3-30-Al and -B, as
determined by a Keating analysis.
- Table 3.5: The bond lengths and the Keating energies for the H_3-, T_4-, and
B_5-model relaxed surfaces of Si{11}rt3*rt3-30-Al and -B, as
determined by a Keating analysis.
- Table 3.6: The structural parameters for the relaxed T_4-model surfaces of
Si{111}rt3*rt3-30-X, as determined by a Keating analysis.
- Table 3.7: The structural parameters and Keating energies
for the relaxed T_4-model surfaces of
Si{111}rt3*rt3-30-X, as determined by a Keating analysis.
- Table 3.8: The structural parameters for the H_3-, T_4-, and
B_5-model surfaces of Ge{11}rt3*rt3-30-Al and -B, as
determined by a Keating analysis.
- Table 3.9: The bond lengths and the Keating energies for the relaxed H_3-, T_4-, and
B_5-model relaxed surfaces of Ge{11}rt3*rt3-30-Al and -B, as
determined by a Keating analysis.
- Table 5.1: The structural parameters for Si{111}rt3*rt3-30-Au,
as determined by a Keating analysis, using several of
the models described in the text.
- Table 5.2: The structural parameters for Si{111}rt3*rt3-30-Au,
as determined by a Keating analysis, using several of
the models described in the text.
- Table 5.3: The structural parameters for Si{111}rt3*rt3-30-Au,
as determined by a Keating analysis, using several of
the models described in the text.
- Table 5.4: Three reliability factors ( (1/2)R_p, r_ZJ, and R_VHT ) for
the optimized MTL-H_3-T_1-model Si{111}rt3*rt3-30-Au structure.
- Table C.1: The model parameters for the Si{111}rt3*rt3-30-Sb surface,
as determined by a Keating analysis.
- Table C.2: The model parameters for the Si{111}rt3*rt3-30-Bi surface,
as determined by a Keating analysis.
- Table C.3: Ge{111}rt3*rt3-30-Sb
- Table C.4: Ge{111}rt3*rt3-30-Bi
- Figure1.3: Truncated Si{111} Surface
- Figure 2.9: Ultra High Vacuum System
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